报告人：沃松涛博士
时间：2016年5月6日上午9：30
地点：上海大学延长校区平板显示中心二楼会议室
报告内容：Organic Electronics Mobility and Grain Boundary Research
This seminar will describe the research Dr. Wo conducted during his Ph.D. at the Organic Electronics in Materials Science and Engineering at University of Vermont, VT, USA. His contribution to organic semiconductor consists of two parts: invention a brand new solution based film deposition technique-hollow pen writing technique, establishment on the correlation between the structure and mobility in large grain size organic semiconductor thin ?lms by using pen writing method.

Dr. Wo invented a brand new solution based  film deposition technique-hollow pen writing technique , by using this innovation, he demonstrate that large grain sizes can be obtained by solution processing and describe the effect of large grain size on the ?eld-effect mobility in OFETs. He has used the hollow pen method to deposit thin ?lms of 6,13-bis(tri-isopropysilylethynyl) pentacene (TIPS pentacene). TIPS pentacene is a promising material because, unlike unsubstituted pentacene, it is highly soluble in common organic solvents.

Dr. Wo established the correlation between the structure and mobility in large grain size organic semiconductor thin ?lms by using pen writing method. The observed correlations show that the large range of mobility values measured for different transistors cannot be predominantly due to other effects, such as local variations in interface quality. This work serves as an important reference for further understanding of the organic electronics transport properties and received international attention which has been cited 56 times among major top journals, such as NATURE MATERIALS, ADVANCED FUNCTIONAL MATERIALS,CHEMICAL REVIEWS, etc.

报告人简介：沃松涛博士毕业与美国佛蒙特大学材料科学与工程专业，毕业后进入IBM从事器件模型萃取，目前在美国三星担任高级工程师从事FinFET器件物理，擅长基于BSIMSOI, BSIMCMG models的器件模型萃取。