当前位置: 首页 >> 开放与交流 >> 通知公告 >> 正文


学术报告:Post-polymerization modification of PS-b-PMMA for application in Sub-10 nm patterning

创建时间:  2019-08-23  任春明    浏览次数:


报告题目:Post-polymerization modification of PS-b-PMMA for application in Sub-10 nm patterning

报告人:Takuya Isono博士(日本北海道大学)

报告时间:2019年8月28日, 10:30-11:30

报告地点:延长校区 平板显示中心二楼大会议室

报告摘要:The microphase separation of block copolymers (BCPs) has attracted increasing attention for its potential applications in nanopatterning with a sub-10 nm resolution. A wide variety of BCPs was investigated as the potential candidates for the DSA materials. Among them, polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA) has been recognized as the standard material for the directed self-assembly applications because of its practical advantages, such as the commercial availability of the monomers, simple polymer synthesis protocol to produce a narrowly-dispersed polymer, reasonable etching rate difference between the PS and PMMA domain, and simple surface control for the perpendicular orientation. However, the weak segregation strength between the PS and PMMA makes the PS-b-PMMA difficult to achieve a resolution below a 10-nm half-pitch. To tackle this issue, we investigated the post-polymerization modification of PS-b-PMMA to increase the incompatibility between the two blocks and thus realize microphase separation with a sub-10-nm feature size. In this talk, we are going to discuss the synthesis and microphase separation behaviors of side-chain- and chain-end-modified PS-b-PMMAs.










上一条:学术报告:A Study on Oxide Thin Film Transistors for Flexible/Stretchable Displays


下一条:学术报告:Novel Synthetic Pathway for Multicyclic Polymers