报告题目：Post-polymerization modification of PS-b-PMMA for application in Sub-10 nm patterning
报告摘要：The microphase separation of block copolymers (BCPs) has attracted increasing attention for its potential applications in nanopatterning with a sub-10 nm resolution. A wide variety of BCPs was investigated as the potential candidates for the DSA materials. Among them, polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA) has been recognized as the standard material for the directed self-assembly applications because of its practical advantages, such as the commercial availability of the monomers, simple polymer synthesis protocol to produce a narrowly-dispersed polymer, reasonable etching rate difference between the PS and PMMA domain, and simple surface control for the perpendicular orientation. However, the weak segregation strength between the PS and PMMA makes the PS-b-PMMA difficult to achieve a resolution below a 10-nm half-pitch. To tackle this issue, we investigated the post-polymerization modification of PS-b-PMMA to increase the incompatibility between the two blocks and thus realize microphase separation with a sub-10-nm feature size. In this talk, we are going to discuss the synthesis and microphase separation behaviors of side-chain- and chain-end-modified PS-b-PMMAs.