丁星伟

创建时间:  2017-11-17     浏览次数:


 

博士,讲师

 

电话:021-56331976

邮箱:dingxingwei@163.com

 

博士毕业于上海大学材料学院,后进入上海大学新型显示教育部重点实验室从事博士后研究,留校工作至今。上海市青年科技英才扬帆计划获得者,主持国家自然科学基金青年项目一项,主持中国博士后科学基金一项,主持企业横向课题一项,作为技术骨干完成企业横向课题2项。发表SCI论文30余篇,其中以第一或者通讯作者发表在微电子领域权威期刊IEEE EDL(1篇), IEEE TED(4篇),IEEE JEDS(1篇),在TOP 期刊JMCC,Ceramics International,Applied Surface Science发表3篇。授权发明专利一项。主要从事基于原子层沉积技术的氧化物薄膜晶体管和薄膜封装方面的研究工作。晶体管广泛的应用于平板显示驱动芯片,医疗探测,集成电路等领域,就业前景良好。薄膜封装是目前柔性手机屏的重点攻关技术,和企业保持密切的技术合作,有很强的工业应用潜力。

 

主持和参与项目:

1、国家自然科学基金青年基金,61804093,氨浴法阴离子掺杂有源层的氧化物TFT缺陷态与稳定性研究,2019/01-2021/12,25万,在研,主持 

2、上海市青年科技英才扬帆计划,17YF1406300,基于ALD技术的柔性薄膜晶体管的构筑与稳定性研究,2017/05-2020/04,20万,在研,主持 

3、中国博士后科学基金,2015M580315,用于AM-OLED驱动的柔性薄膜晶体管的构筑与稳定性研究,2015/09-2017/06,8万,结题,主持 

4、企业委托课题,用于显示器制造工艺开发的先驱物的评估(二期),2019-2021,70万,主持 

5、上海平板显示工程技术研究中心能力提升课题,2019-2022,200万,课题骨干 

6、企业委托课题,用于显示器制造工艺开发的先驱物的评估(一期),2019-2021,67万,技术骨干 

7、企业委托课题,用于柔性显示器封装的ALD工艺开发,2017, 50万,技术骨干

 

代表性论文:

1.  Yongpeng Zhang, Hao Zhang, Bowen Che, Jun Yang, Jianhua Zhang, Xingwei Ding*, A New “Ammonia Bath” Method for Realizing Nitrogen Doping in ZnSnO Transistors, IEEE Electron Device Letters, (2020).

2.  Jialong Wu, Jun Yang, Xuyong Yang, Xingwei Ding*, Low-Voltage Hf-ZnO Thin Film Transistors With Ag Nanowires Gate Electrode and Their Application in Logic Circuit, IEEE Journal of the Electron Devices Society, 8 (2020).

3.  Yongpeng Zhang, Hao Zhang, Jun Yang, Xingwei Ding*, and Jianhua Zhang, Solution-Processed Yttrium-Doped IZTO Semiconductors for High-Stability Thin Film Transistor Applications, IEEE Transactions on Electron Devices, 66 (2019) 5170-5176.

4.  Jun Yang, Yongpeng Zhang, Qianqian Wu, Christian Dussarrat, Jie Qi, Wenqing Zhu, Xingwei Ding* and Jianhua Zhang*, High-Performance 1-V ZnO Thin-Film Transistors With Ultrathin, ALD Processed ZrO2 Gate Dielectric, IEEE Transactions on Electron Devices, 66 (2019) 3382-3386.

5.  Jun Yang, Yongpeng Zhang, Cunping Qin, Xingwei Ding* and Jianhua Zhang*, Enhanced Stability in Zr-Doped ZnO TFTs With Minor Influence on Mobility by Atomic Layer Deposition, IEEE Transactions on Electron Devices, 66 (2019) 1760-1765.

6.  Jun Yang, Bowen Wang, Yongpeng Zhang, Xingwei Ding* and Jianhua Zhang*, Low-temperature combustion synthesis and UV treatment processed p-type Li:NiOx active semiconductors for high-performance electronics, Journal of Materials Chemistry C, 6 (2018) 12584-12591.

7.  Xingwei Ding, Jun Yang, Cunping Qin, Xuyong Yang, Tao Ding, and Jianhua Zhang, Nitrogen-Doped ZnO Film Fabricated Via Rapid Low-Temperature Atomic Layer Deposition for High-Performance ZnON Transistors, IEEE Transactions on Electron Devices, 65 (2018) 3283-3290.

8.  Xingwei Ding, Fei Huang, Sheng Li, Jianhua Zhang, Xueyin Jiang, Zhilin Zhang, Effect of O2 plasma treatment on density-of-states in a-IGZO thin film transistors, Electronic Materials Letters, 13 (2017) 45-50.

9.  Xingwei Ding, Cunping Qin, Jiantao Song, Jianhua Zhang, Xueyin Jiang, Zhilin Zhang, The Influence of Hafnium Doping on Density of States in Zinc Oxide Thin-FilmTransistors Deposited via Atomic Layer Deposition, Nanoscale Research Letters, 12 (2017) 63.

10.  Jianhua Zhang, Xingwei Ding(共同一作), Jun Li, Hao Zhang, Xueyin Jiang, Zhilin Zhang, Performance enhancement in InZnO thin-film transistors with compounded ZrO2–Al2O3 nanolaminateas gate insulators, Ceramics International, 42 (2016) 8115–8119.

11.  Xingwei Ding, Jianhua Zhang, Hao Zhang, He Ding, Chuanxin Huang, Jun Li, Weimin Shi, Xueyin Jiang, Zhilin Zhang, ZrO2 insulator modified by a thin Al2O3 film to enhance the performance of InGaZnO thin-film transistor, Microelectronics Reliability, 54 (2014) 2401–2405.

12.  Xingwei Ding, Jinliang Yan, Ting Li, Liying Zhang, Transparent conductive ITO/Cu/ITO films prepared on flexible substrates at room temperature, Applied Surface Science 258 (2012) 3082-3085.

 

授权发明专利:

一种采用原子层沉积技术沉积氧化物薄膜的装置及方法,发明专利,丁星伟,李春亚,魏斌  2019年8月9日 ZL 2018 1 0800442.2
 

 

 

 

 





上一条:陈果


下一条:郑燕琼