报告题目：
The progress on novel oxide-based electronic devices
；
Oxide Proton Conducting Films for Low-Voltage Thin-Film Transistors
报
告人：
曹鸿涛教授；张洪亮博士
报告时间：
2015
年
5
月
15
日星期五上午
9
点
30
地
点：
上海大学平板显示中心会议室
报告
1. The progress on novel oxide-based electronic devices
By Prof. Dr. Hongtao Cao
Ningbo Institute of Material Technology & Engineering
Chinese Academy of Sciences,
China
摘要
:
Oxide thin-film transistor (TFT)-based electronic components such as inverters and logic circuits are attractive due to their low-cost, low-temperature fabrication, and ease of large-area processability. In addition to exploring high performance unipolar oxide TFTs, ambipolar thin film transistors based on both p-type and n-type channels in one device with thereby simplified circuit design and fabrication processes (No separate patterning or/and doping steps needed), are gaining ever-increasing attention as an alternative approach to realize integrated circuits like radio-frequency identification (RFID) tags or drivers for display applications. In this work, the origin of the unique bipolar property of SnO was discussed based on theoretical calculations, and SnO ambipolar TFTs with balanced hole and electron field-effect mobilities were demonstrated through balancing both the injection and the transport of holes and electrons.
Subsequently, ambipolar CMOS-like inverters working in both the first and third quadrants were demonstrated with output voltage gains over 100 by integrating two identical ambipolar SnO TFTs, behaving as a valuable building block of oxide logic circuits. Moreover, the inverters exhibit excellent environmental stability, a prerequisite for the future ubiquitous electronics. These results suggest that, a simple route in realizing oxide-based ambipolar TFTs and CMOS-like inverters, offers a robust addition to the existing CMOS technology community.
个人简介
:
Hongtao Cao is currently a professor at Ningbo Institute of Material Technology & Engineering (NIMTE), Chinese Academy of Sciences. He received his BS. and PhD at Northeastern University in 1998 and Institute of Metal Research in 2004, respectively. Then he had worked at Royal Institute of Technology, Sweden, as a Postdoctoral Research Fellow ranging from 2004 to 2007. In March 2007, He joined NIMTE as a professor. The members of Cao’s group are committed in fundamental research focusing on exploring and understanding thin films of oxide semiconductors & dielectrics, constructing oxide-based hetero- or homo-structures, developing novel electronic devices, energy-efficiency-related modules, and prospective optoelectronic devices. He has published more than 40 peer-reviewed scientific papers on Phys. Rev. B., Appl. Phys. Lett., ACS Appl. Mater. Interfaces, etc., and held several patents. The ongoing research is supported by 973, NSFC, local government sponsored projects, and industry collaboration partners.
报告
2
Oxide Proton Conducting Films for Low-Voltage Thin-Film Transistors
Abstract
Electric-Double-Layer thin-film transistors (EDLTs) are regarded as ideal devices for potential portable sensors because of large EDL capacitance
(>1
μF/cm2
)
at the dielectric/semiconductor interface and low-voltage operation. In general, EDLTs used to be fabricated using organic proton conductors and organic semiconductors. However, such organic materials usually show a limited chemical stability and durability as well as a low field-effect mobility. To avoid these disadvantag
es, a novel type of field-effect device, oxide-based EDLTs with relatively simple process were fabricated using
nanogranular
Al2O3
,
SiO2
and WOx proton conducting films
(PECVD and sputtering) as gate dielectrics, and transparent conductive indium-zinc-oxide (IZO) and
indium-tin-oxide
films
(ITO) as electrodes (source and drain) and channel.
Such EDLTs exhibit a low operation voltage of ≤1.8 V, a large current on/off ratio of 106 and a high field-effect mobility of 20
cm2/V·s. This results will provide experimentally and theoretically strong basis and foundation
for portable chemical sensors, biosensors, and humidity sensors.
张洪亮，博士，副研究员，硕士生导师。
2003
年获得
兰州大学物理学学士学位；
2008
年和
2011
年分别获得
兰州大学凝聚态物理硕士、博士学位，硕士、博士期间联合培养在兰州大学和中国工程物理研究院从事光电薄膜材料的制备和性能研究；
2011
年
7
月进入中科院宁波材料所从事博士后研究，研究方向为
物理气相沉积和化学气相沉积的薄膜材料制备及其在晶体硅太阳能电池和低电压氧化物薄膜晶体管中的应用，出站后留所，
2013
年
12
月晋升为副研究员。主持国家自然科学基金、中国博士后基金
(
一等
)
、浙江省公益基金、宁波市自然科学基金、
浙江省博士后择优资助等项目。目前已在
Applied Physics Letters
、
Journal of Materials Chemistry
、
IEEE Electron Device Letters
等刊物上发表
SCI
论文
20
余篇，申请中国专利
8
项。
